Silicon Carbide (SiC) wafers are emerging as revolutionary materials in semiconductor technology, particularly in power electronics. SiC offers advantages such as ten times the breakdown electric field strength and three times the bandgap of traditional silicon, making it a leader in high-performance applications.

: SiC's wide bandgap (3.3 eV for 4H-SiC) allows devices to operate at higher voltages, temperatures, and frequencies compared to silicon.

: SiC's superior thermal conductivity enables efficient heat dissipation, crucial for high-power applications.

: The high breakdown field strength allows for the creation of smaller, power-dense devices.

High-Frequency Devices

: SiC crystals are grown using Physical Vapor Transport (PVT) or High-Temperature Chemical Vapor Deposition (HTCVD).

: The grown crystals are sliced, polished, and cleaned to produce high-quality wafers.